Title :
A high linearity, 35 dBm L-band power amplifier for Globalstar applications
Author :
Toncich, S.S. ; Panton, W.
Author_Institution :
Qualcomm Inc., San Diego, CA, USA
Abstract :
A high linearity, class A power amplifier has been designed for the Globalstar transmit band. The power amplifier provides 40 dB of gain at a Pout of 35 dBm (CDMA) at 1610.73 MHz with 30% efficiency with <-75 dBW/MHz ACP at 1605 MHz, thus exceeding the ETSI emissions requirement in the GLONASS band (1585-1605 MHz). The design has been verified from -30/spl deg/C to +70/spl deg/C.
Keywords :
UHF power amplifiers; mobile satellite communication; -30 to 70 C; 1610.73 MHz; 30 percent; 40 dB; GLONASS band; Globalstar applications; L-band; class A power amplifier; high linearity power amplifier; mobile applications; Band pass filters; Circuits; Costs; FETs; Gain; High power amplifiers; L-band; Linearity; Power amplifiers; Power generation;
Conference_Titel :
Technologies for Wireless Applications, 1999. Digest. 1999 IEEE MTT-S Symposium on
Conference_Location :
Vancouver, BC, Canada
Print_ISBN :
0-7803-5152-5
DOI :
10.1109/MTTTWA.1999.755167
