Title :
MMIC amplifier chip sets for Ka-band communications applications
Author :
Freitag, R.G. ; Renaldo, K.M. ; Henry, H.G. ; Degenford, J.E.
Author_Institution :
Div. of Electron. Sensors & Syst., Northrop Grumman Corp., Baltimore, MD, USA
Abstract :
A family of five PHEMT 0.4-0.5 W driver chips and four 1-1.5 W power amplifier chips spanning 28-40 GHz has been developed. A robust 0.25 /spl mu/m T-gate technology enables the constituent 500 /spl mu/m PHEMT cells to consistently achieve yields >70% and power added efficiency >35%. The demonstrated high yield and resulting low cost of these MMICs makes them attractive building blocks for today´s millimeter-wave communications systems.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; driver circuits; integrated circuit reliability; integrated circuit yield; millimetre wave power amplifiers; power integrated circuits; 0.25 micron; 0.4 to 0.5 W; 1 to 1.5 W; 28 to 40 GHz; Ka-band communications applications; MMIC amplifier chip sets; PHEMT driver chips; T-gate technology; high yield; millimeter-wave communications; power added efficiency; power amplifier chips; reliability; Costs; Driver circuits; Etching; Fabrication; MIM capacitors; MMICs; Millimeter wave communication; PHEMTs; Power amplifiers; Satellite communication;
Conference_Titel :
Technologies for Wireless Applications, 1999. Digest. 1999 IEEE MTT-S Symposium on
Conference_Location :
Vancouver, BC, Canada
Print_ISBN :
0-7803-5152-5
DOI :
10.1109/MTTTWA.1999.755169
