DocumentCode :
2679044
Title :
Edge supported ZnO thin film bulk acoustic wave resonators and filter design
Author :
Su, Q.X. ; Kirby, P.B. ; Komuro, E. ; Whatmore, R.K.
Author_Institution :
Sch. of Ind. & Manuf. Sci., Cranfield Univ., Bedford, UK
fYear :
2000
fDate :
2000
Firstpage :
434
Lastpage :
440
Abstract :
Edge supported ZnO thin film bulk acoustic wave resonators of different areas were fabricated using both Al and Au/Cr electrodes and their high frequency response characteristic characterized by S-parameters measurement. The development of an equivalent circuit for the composite resonator leads to an understanding of the dependency on device area and electrode material. The use of varying resonator area in ladder filter design is discussed
Keywords :
S-parameters; acoustic resonator filters; acoustic resonators; band-pass filters; bulk acoustic wave devices; equivalent circuits; frequency response; ladder filters; thin film devices; zinc compounds; CPW structure; Mason model; S-parameters measurement; ZnO; bandpass filter; bulk acoustic wave resonators; composite resonator; device area dependence; edge supported thin film; electrode material dependence; equivalent circuit; high frequency response characteristic; ladder filter design; varying resonator area; Acoustic measurements; Acoustic waves; Chromium; Electrodes; Frequency response; Gold; Scattering parameters; Thin film circuits; Transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium and Exhibition, 2000. Proceedings of the 2000 IEEE/EIA International
Conference_Location :
Kansas City, MO
ISSN :
1075-6787
Print_ISBN :
0-7803-5838-4
Type :
conf
DOI :
10.1109/FREQ.2000.887396
Filename :
887396
Link To Document :
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