Title :
A 60 GHz GaAs FET Amplifier
Author :
Watkins, E.T. ; Schellenberg, J.M. ; Hackett, L.H. ; Yamasaki, H. ; Feng, M.
fDate :
May 31 1983-June 3 1983
Abstract :
Using a 1/4 µm gate structure, a new millimeter wave FET device has been developed. This device, in a waveguide/MIC amplifier circuit, has demonstrated gains of 5.0 +-0.5 dB from 55 to 62 GHz with a minimum noise figure of 7.1 dB at 60 GHz.
Keywords :
Broadband amplifiers; Circuit noise; Electrical resistance measurement; FETs; Gain measurement; Gallium arsenide; Impedance; Microwave integrated circuits; Noise figure; Noise measurement;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130838
