DocumentCode
2679098
Title
Detecting stability faults in sub-threshold SRAMs
Author
Lin, Chen-Wei ; Yang, Hao-Yu ; Huang, Chin-Yuan ; Chen, Hung-Hsin ; Chao, Mango C -T
Author_Institution
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear
2011
fDate
7-10 Nov. 2011
Firstpage
28
Lastpage
33
Abstract
Detecting stability faults has been a crucial task and a hot research topic for the testing of conventional super-threshold 6T SRAM in the past. When lowering the supply voltage of SRAM to the subthreshold region, the impact of stability faults may significantly change, and hence the test methods developed in the past for detecting stability faults may no longer be effective. In this paper, we first categorize the subthreshold-SRAM designs into different types according to their bit-cell structures. Based on each type, we then analyze the difference of its stability faults compared to the conventional super-threshold 6T SRAM, and discuss how the stability-fault test methods should be modified accordingly. A series of experiments are conducted to validate the effectiveness of each stability-fault test method for different types of subthreshold-SRAM designs.
Keywords
SRAM chips; integrated circuit design; integrated circuit reliability; integrated circuit testing; bit-cell structures; stability fault detection; stability-fault test methods; subthreshold SRAM design; superthreshold 6T SRAM; Circuit stability; Inverters; MOSFETs; Random access memory; Resistance; Stability analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Print_ISBN
978-1-4577-1399-6
Electronic_ISBN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2011.6105301
Filename
6105301
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