• DocumentCode
    2679098
  • Title

    Detecting stability faults in sub-threshold SRAMs

  • Author

    Lin, Chen-Wei ; Yang, Hao-Yu ; Huang, Chin-Yuan ; Chen, Hung-Hsin ; Chao, Mango C -T

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    7-10 Nov. 2011
  • Firstpage
    28
  • Lastpage
    33
  • Abstract
    Detecting stability faults has been a crucial task and a hot research topic for the testing of conventional super-threshold 6T SRAM in the past. When lowering the supply voltage of SRAM to the subthreshold region, the impact of stability faults may significantly change, and hence the test methods developed in the past for detecting stability faults may no longer be effective. In this paper, we first categorize the subthreshold-SRAM designs into different types according to their bit-cell structures. Based on each type, we then analyze the difference of its stability faults compared to the conventional super-threshold 6T SRAM, and discuss how the stability-fault test methods should be modified accordingly. A series of experiments are conducted to validate the effectiveness of each stability-fault test method for different types of subthreshold-SRAM designs.
  • Keywords
    SRAM chips; integrated circuit design; integrated circuit reliability; integrated circuit testing; bit-cell structures; stability fault detection; stability-fault test methods; subthreshold SRAM design; superthreshold 6T SRAM; Circuit stability; Inverters; MOSFETs; Random access memory; Resistance; Stability analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Print_ISBN
    978-1-4577-1399-6
  • Electronic_ISBN
    1092-3152
  • Type

    conf

  • DOI
    10.1109/ICCAD.2011.6105301
  • Filename
    6105301