Analysis of the rutile-ring method of frequency-temperature compensation of a high-Q whispering gallery sapphire resonator

Author

Tobar, Michael E. ; Hartnett, John G. ; Duchiron, Guillaume ; Cros, Dominique ; Ivanov, Eugene N. ; Blondy, Pierre ; Guillon, Pierre

Author_Institution

Dept. of Phys., Western Australia Univ., Nedlands, WA, Australia

fYear

2000

fDate

2000

Firstpage

485

Lastpage

492

Abstract

Rigorous analysis of the rutile-ring method of frequency-temperature compensating of a high-Q sapphire resonator has been presented. A high Q-factor of 30 million was obtained with an annulment temperature of 56 K mainly limited by dielectric loss. The condition to obtain a low spurious mode density, high-q resonance that has a low susceptibility to environmental effects was established. It is desirable to design the compensation in the regime dominated by an antiresonance effect due to the rutile rings

Keywords

Q-factor; compensation; crystal resonators; dielectric losses; microwave oscillators; sapphire; titanium compounds; 12 GHz; 56 K; Al₂O₃; Q-factor; TiO₂; annulment temperature; antiresonance effect; dielectric loss; environmental effects; frequency-temperature compensation; rutile-ring method; spurious mode density; whispering gallery sapphire resonator; Dielectrics; Finite element methods; Fluctuations; Microwave oscillators; Paramagnetic materials; Permittivity; Q factor; Resonant frequency; Stability; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium and Exhibition, 2000. Proceedings of the 2000 IEEE/EIA International

Conference_Location

Kansas City, MO

ISSN

1075-6787

Print_ISBN

0-7803-5838-4

Type

conf

DOI

10.1109/FREQ.2000.887405

Filename

887405