A power efficient wide band trans-impedance amplifier in sub-micron CMOS integrated circuit technology

Author

Raut, Rabin ; Ghasemi, Omidreza

Author_Institution

Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, QC

fYear

2008

fDate

22-25 June 2008

Firstpage

113

Lastpage

116

Abstract

This article proposes a simple trans-impedance amplifier (TIA) using a given (i.e. 0.18 micron CMOS) VLSI technological process. The TIA offers a very wide band-width of operation with very small power consumption. Compared with several TIA reported in the past, our TIA is more competitive when band-width (more than 4 GHz) versus power consumption (less than 3.5 mW) criterion is used as a metric for the merit of the structure. Analytical optimization of the terminal characteristics of the TIA are presented. Results of simulation are reported , together with a comparison with TIA structures reported in the recent past.

Keywords

CMOS analogue integrated circuits; VLSI; low-power electronics; wideband amplifiers; CMOS integrated circuit technology; VLSI technological process; power consumption; size 0.18 mum; wide band trans-impedance amplifier; CMOS integrated circuits; CMOS process; CMOS technology; Energy consumption; Equivalent circuits; Impedance matching; Integrated circuit technology; Power amplifiers; Reflection; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems and TAISA Conference, 2008. NEWCAS-TAISA 2008. 2008 Joint 6th International IEEE Northeast Workshop on

Conference_Location

Montreal, QC

Print_ISBN

978-1-4244-2331-6

Electronic_ISBN

978-1-4244-2332-3

Type

conf

DOI

10.1109/NEWCAS.2008.4606334

Filename

4606334