A model for phase noise generation in amplifiers

Author

Tomlin, Toby-D ; Fynn, Kevin ; Cantoni, Antonio

Author_Institution

Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia

fYear

2000

fDate

2000

Firstpage

516

Lastpage

524

Abstract

In this paper a new model is presented for predicting the phase modulation (PM), and amplitude modulation (AM) noise in bipolar junction transistor (BJT) amplifiers. The new model correctly predicts the dependence of phase noise on the signal frequency (at a particular carrier offset frequency), explains the noise shaping of the phase noise about the signal frequency, and shows the functional dependence on the transistor parameters, and the circuit parameters. Experimental studies on common emitter (CE) amplifiers have been used to validate the PM noise model at carrier frequencies between 10 MHz and 100 MHz

Keywords

HF amplifiers; VHF amplifiers; amplitude modulation; bipolar transistor circuits; circuit noise; equivalent circuits; network analysis; phase modulation; phase noise; AM noise; BJT amplifiers; PM noise; amplitude modulation noise; bipolar junction transistor amplifiers; circuit parameters; common emitter amplifiers; noise shaping; phase modulation noise; phase noise generation model; signal frequency; transistor parameters; Amplitude modulation; Circuit noise; Fluctuations; Frequency; Noise level; Noise measurement; Noise shaping; Phase modulation; Phase noise; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium and Exhibition, 2000. Proceedings of the 2000 IEEE/EIA International

Conference_Location

Kansas City, MO

ISSN

1075-6787

Print_ISBN

0-7803-5838-4

Type

conf

DOI

10.1109/FREQ.2000.887410

Filename

887410