1/f frequency noise of 2 GHz high-Q over-moded sapphire resonators

Author

Ferre-Pikal, E.S. ; Aramburo, M. C Delgado ; Walls, F.L. ; Lakin, K.M.

Author_Institution

Wyoming Univ., Laramie, WY, USA

fYear

2000

fDate

2000

Firstpage

536

Lastpage

540

Abstract

We present experimental results on intrinsic 1/f frequency modulation (FM) noise in high-overtone thin-film sapphire resonators that operate at 2 GHz. The resonators exhibit several high-Q resonant modes approximately 100 kHz apart, which repeat every 13 MHz. A loaded Q of approximately 20,000 was estimated from the phase response. The results show that the FM noise of the resonators varied between S_y(10 Hz)=-202 dB relative (rel) to 1/Hz and -210 dB rel to 1/Hz. The equivalent phase modulation (PM) noise of an oscillator using these resonators (assuming a noiseless amplifier) would range from L(10 Hz)=-39 to -47 dBc/Hz

Keywords

1/f noise; Q-factor; UHF devices; dielectric resonators; frequency modulation; sapphire; thin film devices; 1/f frequency noise; 2 GHz; Al₂O₃; PM noise; frequency modulation noise; high-Q resonant modes; high-Q sapphire resonators; high-overtone resonators; intrinsic 1/f FM noise; over-moded sapphire resonators; phase modulation noise; phase response; thin-film sapphire resonators; Frequency estimation; Frequency measurement; Government; Insertion loss; Noise figure; Noise measurement; Protection; Resonance; Resonator filters; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium and Exhibition, 2000. Proceedings of the 2000 IEEE/EIA International

Conference_Location

Kansas City, MO

ISSN

1075-6787

Print_ISBN

0-7803-5838-4

Type

conf

DOI

10.1109/FREQ.2000.887413

Filename

887413