DocumentCode
2679487
Title
A Theory for the Prediction of GaAs FET Load-Pull Power Contours
Author
Cripps, S.C.
fYear
1983
fDate
May 31 1983-June 3 1983
Firstpage
221
Lastpage
223
Abstract
A theory is presented which is capable of predicting the power load-pull contours of a GaAs FET in a convenient mathematical formulation. Although based on some initial simplifying assumptions, the predicted contours are shown to be in good agreement with experimental measurements.
Keywords
FETs; Gallium arsenide; Impedance measurement; Microwave frequencies; Noise generators; Power generation; Power measurement; Solid state circuits; Tuners; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1983.1130864
Filename
1130864
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