DocumentCode :
2679650
Title :
Carbon nanotube imperfection-immune digital VLSI: Frequently asked questions updated
Author :
Wei, Hai ; Zhang, Jie ; Wei, Lan ; Patil, Nishant ; Lin, Albert ; Shulaker, Max M. ; Chen, Hong-Yu ; Wong, H. S Philip ; Mitra, Subhasish
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2011
fDate :
7-10 Nov. 2011
Firstpage :
227
Lastpage :
230
Abstract :
Carbon Nanotube Field-Effect Transistors (CNFETs) are excellent candidates for designing highly energy-efficient future digital systems. However, carbon nanotubes (CNTs) are inherently highly subject to imperfections that pose major obstacles to robust CNFET digital VLSI. This paper summarizes commonly raised questions and concerns about CNFET technology through a series of frequently asked questions. The specific questions addressed in this paper are motivated by recent advances in the field since the publication of our earlier paper on frequently asked questions in the Proceedings of the 2009 Design Automation Conference.
Keywords :
VLSI; carbon nanotube field effect transistors; electronic design automation; 2009 Design Automation Conference; carbon nanotube imperfection-immune digital VLSI; energy-efficient future digital system; robust CNFET digital VLSI; CNTFETs; Carbon nanotubes; Integrated circuit modeling; Logic gates; Silicon; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Print_ISBN :
978-1-4577-1399-6
Electronic_ISBN :
1092-3152
Type :
conf
DOI :
10.1109/ICCAD.2011.6105330
Filename :
6105330
Link To Document :
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