DocumentCode
2679650
Title
Carbon nanotube imperfection-immune digital VLSI: Frequently asked questions updated
Author
Wei, Hai ; Zhang, Jie ; Wei, Lan ; Patil, Nishant ; Lin, Albert ; Shulaker, Max M. ; Chen, Hong-Yu ; Wong, H. S Philip ; Mitra, Subhasish
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2011
fDate
7-10 Nov. 2011
Firstpage
227
Lastpage
230
Abstract
Carbon Nanotube Field-Effect Transistors (CNFETs) are excellent candidates for designing highly energy-efficient future digital systems. However, carbon nanotubes (CNTs) are inherently highly subject to imperfections that pose major obstacles to robust CNFET digital VLSI. This paper summarizes commonly raised questions and concerns about CNFET technology through a series of frequently asked questions. The specific questions addressed in this paper are motivated by recent advances in the field since the publication of our earlier paper on frequently asked questions in the Proceedings of the 2009 Design Automation Conference.
Keywords
VLSI; carbon nanotube field effect transistors; electronic design automation; 2009 Design Automation Conference; carbon nanotube imperfection-immune digital VLSI; energy-efficient future digital system; robust CNFET digital VLSI; CNTFETs; Carbon nanotubes; Integrated circuit modeling; Logic gates; Silicon; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Print_ISBN
978-1-4577-1399-6
Electronic_ISBN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2011.6105330
Filename
6105330
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