Title :
K-Band Via-Hole Grounding Pi-Gate FET With Monolithic On-Chip Matching Network
Author :
Saunier, P. ; Nelson, S.
fDate :
May 31 1983-June 3 1983
Abstract :
A 1650 µm gate width GaAs FET with monolithic partial on-chip matching network of the input for broadband operation had 630 mW output power with 4 dB gain from 17 to 20.5 GHz. The pi-gate design includes 13 reactive-ion-etched source vias on a 50 µm substrate with a plated heat sink.
Keywords :
Bonding; FETs; Gain; Gold; Grounding; Impedance; Inductance; K-band; Network-on-a-chip; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130880
