Title :
Design and Performance of K-Band Power GaAs FETs on Matched Carriers
Author :
Rosenheck, L. ; Dow, S. ; Berglund, C. ; Stevens, M.
fDate :
May 31 1983-June 3 1983
Abstract :
Experimental relationships between the gain of K-band GaAs power FETs and the device geometries. Output powers as high as 1100mW with 4.3dB associated gain at 20.2 GHz have been measured. Matched carrier performance on both fused silica and sapphire is described.
Keywords :
Circuits; Doping; FETs; Gallium arsenide; K-band; Laboratories; Packaging; Power amplifiers; Power generation; Semiconductor device measurement;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130881
