Title :
GaAs MESFET Oscillator Design Using Large-Signal S-Parameters
Author :
Gilmore, R.J. ; Rosenbaum, F.J.
fDate :
May 31 1983-June 3 1983
Abstract :
A novel analytical technique is presented which uniquely determines the embedding network required for a MESFET oscillator to deliver specified power to an arbitrary load. An experimental 5.3 GHz oscillator provided 24 dBm with 35% efficiency.
Keywords :
Circuit stability; Circuit topology; FETs; Frequency; Gallium arsenide; Impedance; MESFETs; Oscillators; Scattering parameters; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130884
