DocumentCode
2679814
Title
Near-Carrier Noise in FET Oscillators
Author
Pucel, R.A. ; Curtis, J.
fYear
1983
fDate
May 31 1983-June 3 1983
Firstpage
282
Lastpage
284
Abstract
An exhaustive study is presented of the relation of near-carrier FM noise of FET oscillators to baseband noise, gate technology, surface passivation, channel formation, and traps. FM noise performance of an FET oscillator will be presented which is over 20 dB better than heretofore reported.
Keywords
Admittance; Baseband; Circuit noise; Frequency; Gallium arsenide; Microwave FETs; Microwave oscillators; Noise level; Noise reduction; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1983.1130885
Filename
1130885
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