Title :
Near-Carrier Noise in FET Oscillators
Author :
Pucel, R.A. ; Curtis, J.
fDate :
May 31 1983-June 3 1983
Abstract :
An exhaustive study is presented of the relation of near-carrier FM noise of FET oscillators to baseband noise, gate technology, surface passivation, channel formation, and traps. FM noise performance of an FET oscillator will be presented which is over 20 dB better than heretofore reported.
Keywords :
Admittance; Baseband; Circuit noise; Frequency; Gallium arsenide; Microwave FETs; Microwave oscillators; Noise level; Noise reduction; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130885
