DocumentCode :
2680017
Title :
The effect of an additional ti layer in a sub-/spl mu/m double level Ti/TiN-AlSiCu-TiN metallization for a CMOS-logic-process
Author :
Stegemann, K.H. ; Beyer, C. ; Kahlert, V. ; Heinig, V. ; Pahner, J.
Author_Institution :
Zentrum Mikroelektronik Dresden
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
40
Lastpage :
42
Keywords :
Application specific integrated circuits; Atherosclerosis; CMOS logic circuits; CMOS technology; Contact resistance; Electromigration; Metallization; Optical microscopy; Scanning electron microscopy; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887504
Filename :
887504
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680017
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