Title :
A Hybrid GaAs MIC Oscillator Using a Magnetostatic Wave Resonator
Author :
Owens, J.M. ; Carter, R.L. ; Sam, Y.W.
fDate :
May 31 1983-June 3 1983
Abstract :
A Magnetostatic Surface Wave resonator and GaAs Field Effect transistor amplifier have been fabricated in an integrated format on a common MIC substrate operating at 3 GHz. The resultant oscillator had an output of -30 dB and phase noise of -92 dBc/Hz at 20 kHz offset.
Keywords :
Etching; FETs; Gallium arsenide; Gold; Magnetostatic waves; Microwave integrated circuits; Microwave oscillators; Resonant frequency; Substrates; Transducers;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130899