مرکز منطقه ای اطلاع رساني علوم و فناوري - Rapid thermal low pressure chemical vapor deposition of TiN layers from the TiCI4-NH3-H2 gaseous phase

DocumentCode :

2680040

Title :

Rapid thermal low pressure chemical vapor deposition of TiN layers from the TiCI₄-NH₃-H₂ gaseous phase

Author :

Bouteville, A. ; Imhoff, L. ; Remy, J.C.

Author_Institution :

Ecole Nationale Superieure d´´Arts et Metiers

fYear :

1997

fDate :

16-19 March 1997

Firstpage :

Lastpage :

Keywords :

Atomic layer deposition; Chemical vapor deposition; Conductivity; Inductors; Inorganic materials; Metallization; Silicon; Temperature; Tin; Titanium;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop

Conference_Location :

Villard de Lans, France

ISSN :

1266-0167

Type :

conf

DOI :

10.1109/MAM.1998.887505

Filename :

887505

Link To Document :