• DocumentCode
    2680089
  • Title

    Accelerated statistical simulation via on-demand Hermite spline interpolations

  • Author

    Kanj, Rouwaida ; Li, Tong ; Joshi, Rajiv ; Agarwal, Kanak ; Sadigh, Ali ; Winston, David ; Nassif, Sani

  • Author_Institution
    IBM Austin Res. Labs., Austin, TX, USA
  • fYear
    2011
  • fDate
    7-10 Nov. 2011
  • Firstpage
    353
  • Lastpage
    360
  • Abstract
    We propose an efficient Hermite spline-based SPICE simulation methodology for accurate statistical yield analysis. Unlike conventional methods, the spline-based transistor tables are built on-demand specific to the transient simulation requirements of the statistical experiments. Compared with traditional MOSFET table models, on-demand spline table models use ~500X less memory. This makes Hermite spline-based table models practical for use in simulations for process variation modeling. Furthermore, we propose an efficient gate voltage offset approach to model transistor threshold voltage variation. In this scenario, evaluations of the transistor model rely on a single reference table and require one set of spline function evaluations per VT sample point as opposed to two or more sets for VT interpolation. This method is comprehensive and the results are in excellent agreement with traditional BSIM-based simulations. Around 4X improvement in speed, which includes the table generation cost, could be further improved by employing other fast-SPICE techniques or parallelism. To the best of our knowledge, this is the first time such a methodology has been coupled with importance sampling techniques to study the yield of memory designs.
  • Keywords
    SPICE; importance sampling; interpolation; splines (mathematics); transistors; BSIM-based simulations; Hermite spline-based SPICE simulation methodology; MOSFET table models; accelerated statistical simulation; gate voltage offset approach; importance sampling techniques; memory designs; on-demand Hermite spline interpolations; process variation modeling; spline-based transistor tables; statistical yield analysis; table generation cost; transistor threshold voltage variation modelling; Analytical models; Capacitance; Integrated circuit modeling; Interpolation; Logic gates; Spline; Threshold voltage; Hermite splines; SRAM; Simulation; statistical yield analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Print_ISBN
    978-1-4577-1399-6
  • Electronic_ISBN
    1092-3152
  • Type

    conf

  • DOI
    10.1109/ICCAD.2011.6105354
  • Filename
    6105354