Title :
A Frequency Translator Using Dual-Gate GaAs FETs
Author :
Mazumder, S.R. ; Tsai, T.L. ; Tsai, W.C.
fDate :
May 31 1983-June 3 1983
Abstract :
An active 11.5 GHz frequency translator using four dual-gate FETs has been developed. Carrier and spurious sideband suppression of more than 20 dB has been achieved for translation frequency of up to 1 MHz. The same circuit can also be used as a high speed QPSK modulator with phase transition time of about 1 nanosecond.
Keywords :
Circuits; FETs; Frequency; Gallium arsenide; Phase shifters; Quadrature phase shift keying; Radiofrequency amplifiers; Signal generators; Varactors; Voltage control;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130907
