Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength (∼1.3 μm)

Author

Shi, Jin-Wei ; Gan, Kian-Giap ; Bowers, John E. ; Liu, Tzu-Ming ; Sun, Chi-Kuang ; Chiu, Yi-Jen

Author_Institution

Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Hsinchu, Taiwan

Volume

2

fYear

2003

fDate

15-19 Dec. 2003

Abstract

We observed distinct nonlinear behaviors of bandwidth degradation in low-temperature-grown-GaAs based traveling-wave-photodetectors under long wavelength (∼1300 nm) operation. The disclosed unique material properties of LTG-GaAs at different excitation wavelengths are important for its applications in ultrafast optoelectronic and understanding its carrier dynamics in the defect states.

Keywords

III-V semiconductors; defect states; gallium arsenide; high-speed optical techniques; microwave photonics; photodetectors; semiconductor growth; 1.3 mum; GaAs; GaAs based photodetectors; bandwidth degradation; carrier dynamics; defect states; long telecommunication wavelength; low-temperature-grown GaAs; nonlinear behaviors; traveling-wave-photodetectors; ultrafast optoelectronic; Charge carrier density; Gallium arsenide; Gallium nitride; Laser excitation; Optical scattering; Particle scattering; Photodetectors; Sampling methods; Sun; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1276962

Filename

1276962