DocumentCode
2680284
Title
Excitation fluence dependence of THz-radiation from femtosecond-laser irradiated InAs under magnetic field
Author
Takahashi, Hiroshi ; Quema, Alex ; Yoshioka, Ryoichiro ; Ono, Shingo ; Sarukura, Nobuhiko
Author_Institution
Dept. of Photo Sci., Graduate Univ. for Adv. Studies, Hayama, Japan
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
The excitation fluence and magnetic field dependence of THz-radiation power from InAs is investigated. It is found that there are two THz-radiation mechanisms for the femtosecond-laser-irradiated InAs depending on the excitation fluence.
Keywords
III-V semiconductors; high-speed optical techniques; indium compounds; laser beam effects; magneto-optical effects; submillimetre wave generation; InAs; THz-radiation; excitation fluence; femtosecond-laser irradiation; magnetic field; Acceleration; Charge carrier processes; Electron emission; Electron optics; Intrusion detection; Laser excitation; Magnetic fields; Optical pulses; Stimulated emission; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1276964
Filename
1276964
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