DocumentCode
2680307
Title
Focused ion beam sample preparation, transmission electron microscopy and electron energy loss spectroscopy analysis of advanced CMOS silicon technology interconnections
Author
Pantel, R. ; Auvert, G. ; Mascarin, G.
Author_Institution
France Telecom - CNET
fYear
1997
fDate
16-19 March 1997
Firstpage
99
Lastpage
101
Keywords
CMOS technology; Electron beams; Energy loss; Etching; Integrated circuit interconnections; Ion beams; Metallization; Plasma applications; Transmission electron microscopy; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1998.887525
Filename
887525
Link To Document