DocumentCode :
2680317
Title :
Dry etch challenges of 0.25 /spl mu/m dual damascene structures
Author :
Schnabel, R.F. ; Dobuzinski, D. ; Wang, F. ; Perng, D.C. ; Gambino, J. ; Palm, H.
Author_Institution :
Siemens
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
102
Lastpage :
104
Keywords :
Dry etching; Inorganic materials; Integrated circuit interconnections; LAN interconnection; Lithography; Metallization; Random access memory; Resists; Sputter etching; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887526
Filename :
887526
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680317
