DocumentCode :
2680325
Title :
Selective TiSi2 by CVD, one step further
Author :
Maury, D. ; Regolini, J.L.
Author_Institution :
France Telecom - CNET Grenoble
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
105
Lastpage :
107
Keywords :
Chemical technology; Circuits; Contact resistance; Inorganic materials; Metallization; Sheet materials; Silicides; Substrates; Temperature; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887527
Filename :
887527
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680325
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