A four-million pixel CCD image sensor

Author

Lee, T.H. ; Khosla, R.P. ; Burkey, B.C. ; Chang, W.-C. ; Moore, G.R. ; Losee, D.L. ; Wong, K.Y.

Author_Institution

Eastman Kodak Co., Rochester, NY, USA

fYear

1989

fDate

17-19 May 1989

Firstpage

41

Lastpage

44

Abstract

The authors have developed an ultra-high-resolution, full-frame CCD imager of 2048×2048 pixels. The pixel size is 9 μm×9 μm. The sensor has dual readout registers to increase the data rate. It is designed for a horizontal clock rate of 20 MHz. With the dual line readout mode, it takes 114 ms to read a frame. The experimental device has less than 0.5 nA/cm² dark current at room temperature, corresponding to about 25 electrons of dark shot noise at 200 ms frame time, including both integration and read time. The output amplifier, made of a two-stage source follower, has a sensitivity of 10 mV per electron. With correlated double sampling, the output amplifier contributes about 10 noise electrons at the 20 MHz data rate. Thus, the dark shot noise is the dominant noise component unless the imager is cooled. The charge capacity of the CCD is 85000 electrons, giving a dynamic range of 3000. A charge transfer efficiency of 0.99999 has been observed

Keywords

CCD image sensors; electron device noise; 114 to 200 ms; 20 MHz; 2048 pixel; 4194304 pixel; CCD image sensor; charge transfer efficiency; charge-coupled device; correlated double sampling; dark shot noise; dual line readout mode; dual readout registers; full-frame; horizontal clock rate; output amplifier; two-stage source follower; ultra-high-resolution; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Clocks; Dark current; Dynamic range; Electrons; Image sampling; Pixel; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/VTSA.1989.68578

Filename

68578