DocumentCode :
2680412
Title :
A self-aligned silicide technology with the Mo/Ti bilayer system
Author :
Kaplan, W. ; Mouroux, A. ; Zhang, S.L.
Author_Institution :
Industrial Microelectronics Center
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
116
Lastpage :
117
Keywords :
Electrical resistance measurement; Inorganic materials; Metallization; Microelectronics; Semiconductor films; Silicides; Solid state circuits; Temperature; Testing; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887533
Filename :
887533
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680412
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