DocumentCode
268051
Title
Magnetostrictive type tactile sensor based on metal embedded polymer architecture
Author
Chang, Hsie-Chia ; Sung, W.-L. ; Hsieh, H.-S. ; Wen, J.-H. ; Fu, C.-C. ; Liao, S.-C. ; Lai, Chi-Hui ; Lai, Wei-Chi ; Chang, Chih-Hung ; Chang, Chorng-Ping ; Chen, Chun-Hung ; Fang, Wanliang
Author_Institution
Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear
2014
fDate
26-30 Jan. 2014
Firstpage
1189
Lastpage
1192
Abstract
This study presents new process scheme to fabricate polymer structure with embedded metal on silicon substrate. The primary merit of presented process scheme is: simple approach for the integration of 3D structures with different materials (e.g. metal, glass, polymer) on substrate. To demonstrate the feasibility of the proposed process scheme, a tactile sensor design consisting of polymer structure with embedded 3D Ni coil winding is implemented. As the polymer diaphragm deformed by tactile force, the magnetostriction effect of the 3D Ni coil inductor will induce the permeability change. Thus, the permeability change as well as the tactile force can be detected by the inductance variation. Preliminary measurements show the sensitivity of magnetostrictive type tactile sensor based on the proposed metal embedded polymer architecture is near 1.33%/N at the sensing range of 0~1N.
Keywords
coils; inductors; magnetic permeability; magnetic sensors; magnetostriction; magnetostrictive devices; nickel; polymers; silicon; tactile sensors; windings; 3D Ni coil inductor; 3D Ni coil winding; 3D structures; Ni; Si; inductance variation; magnetostriction effect; magnetostrictive type tactile sensor; metal embedded polymer architecture; permeability change; polymer diaphragm; polymer structure; tactile force; tactile sensor design; Coils; Magnetostriction; Nickel; Silicon; Tactile sensors; Three-dimensional displays; Windings;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location
San Francisco, CA
Type
conf
DOI
10.1109/MEMSYS.2014.6765860
Filename
6765860
Link To Document