A low-power-consumption VCSEL driver IC for 10 Gb/s direct modulation using InGaP/GaAs HBT

Author

Eo, Ji Young ; Kang, Saekyoung ; Hyo-Hoon Park ; Jung, D.Y. ; Park, Hyo-Hoon ; Yoon, K.S.

Author_Institution

Opt. Interconnection & Switching Lab., Inf. & Commun. Univ., Daejeon, South Korea

Volume

2

fYear

2003

fDate

15-19 Dec. 2003

Abstract

We designed a 10 Gb/s driver IC for direct modulation of VCSEL (vertical-cavity surface-emitting laser) diodes, using InGaP/GaAs heterojunction bipolar transistor technology with a cut-off frequency of 45 GHz and an emitter area of 6 μm². The fiber launched optical output signal of the VCSEL driven by the fabricated driver IC exhibits rise/fall times of 54.3/68.6 psec and a controllable extinction ratio at a 3.3 V supply voltage with 250 mV_pp input data sequence. The driver IC consumes a small power of 65 mW as well.

Keywords

III-V semiconductors; bipolar transistors; driver circuits; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical communication equipment; optical fabrication; semiconductor heterojunctions; semiconductor lasers; surface emitting lasers; 10 Gbit/s; 3.3 V; 45 GHz; 54.3 ps; 65 mW; 68.6 ps; InGaP-GaAs; VCSEL diodes; direct modulation; driver IC; heterojunction bipolar transistor; vertical-cavity surface-emitting laser; Bipolar integrated circuits; Diodes; Driver circuits; Fiber lasers; Gallium arsenide; Heterojunction bipolar transistors; Laser beam cutting; Optical design; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1276987

Filename

1276987