DocumentCode :
2680594
Title :
Reactive ion etching of metal stack consisting of an aluminium alloy, WGEx barrier and Ti adhesion layer
Author :
Sabouret, E. ; Verhoeven, P.F.M. ; Jongste, J.F. ; Janssen, G.C.A.M. ; Radelaar, S.
Author_Institution :
Delft Institute of Microelectronies and Submicron Technology
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
138
Lastpage :
139
Keywords :
Aluminum alloys; Anisotropic magnetoresistance; Etching; Gases; Inorganic materials; Metallization; Plasma applications; Plasma chemistry; Radio frequency; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887547
Filename :
887547
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680594
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