DocumentCode :
268065
Title :
Capacitive silicon resonator structure with movable electrodes to reduce capacitive gap widths based on electrostatic parallel plate actuation
Author :
Nguyen Van Toan ; Ono, Takahito
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
fYear :
2014
fDate :
26-30 Jan. 2014
Firstpage :
1245
Lastpage :
1248
Abstract :
This paper presents the design and fabrication of a capacitive silicon resonator with movable electrodes to obtain smaller capacitive gap widths, which results in smaller motional resistance and lower insertion loss. It also helps to increase the tuning frequency range for the compensation of temperature drift of the silicon resonator. The resonant frequency of the fabricated device with a length of 500 μm, width of 440 μm and thickness of 5 μm is observed at 9.65 MHz, and the quality factor is 49,000. Using electrostatically-drived movable electrode structure, it is shown that the motional resistance is reduced by 200 times, the output signal (insertion loss) is improved by 21 dB and the tuning characteristic of the frequency is 7 times larger than those of the structures without movable electrode structures.
Keywords :
compensation; electrostatic actuators; elemental semiconductors; micromechanical resonators; silicon; Si; capacitive gap width reduction; capacitive silicon resonator structure; electrostatic parallel plate actuation; electrostatically-drived movable electrode structure; insertion loss; motional resistance; quality factor; size 440 mum; size 500 mum; temperature drift compensation; tuning frequency range; Electrodes; Immune system; Q-factor; Resistance; Resonant frequency; Silicon; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location :
San Francisco, CA
Type :
conf
DOI :
10.1109/MEMSYS.2014.6765874
Filename :
6765874
Link To Document :
بازگشت