DocumentCode
2680708
Title
Design and Performance of Dual-Gate GaAs MESFET Up-Converter
Author
de Salles, A.A.
fYear
1983
fDate
May 31 1983-June 3 1983
Firstpage
440
Lastpage
442
Abstract
Design procedure and experimental results for a GaAs MESFET Up-Converter using a dual gate device are presented. DC and S parameter measurements are used to estimate the appropriate biasing and matching conditions. High conversion gain (~8dB) and moderate noise performance (~7dB) were obtained.
Keywords
Circuit noise; FETs; Filters; Frequency conversion; Gallium arsenide; Local oscillators; MESFET circuits; Performance gain; Scattering parameters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1983.1130940
Filename
1130940
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