DocumentCode :
2680714
Title :
Variation-aware electromigration analysis of power/ground networks
Author :
Li, Di-an ; Marek-Sadowska, Malgorzata
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
fYear :
2011
fDate :
7-10 Nov. 2011
Firstpage :
571
Lastpage :
576
Abstract :
Due to shrinking wire dimensions, higher current density, and process variations, electromigration (EM) has become a major reliability problem. The existing backend design flows use the maximum allowed current density as the only practical guidance to prevent EM. There is a need for tools capable of performing comprehensive EM analyses. In this paper, we first explain why current density alone does not determine wire´s susceptibility to EM. We introduce our variation-aware EM analysis tool, VEMA, for power/ground networks, which are typically the EM-critical parts of a chip. Our tool considers two types of variations: circuit-level and wire geometry-level. VEMA reports distributions of wire lifetimes for circuit-level variations. Compared to existing EM analyzer SysRel, VEMA filters out EM-immortal wires more efficiently and provides detailed feedback for EM violation corrections. VEMA also provides information of geometry-level tolerance for EM-mortal wires.
Keywords :
current density; electromigration; integrated circuit reliability; microprocessor chips; wires (electric); EM analyzer SysRel; EM-critical parts; EM-immortal wires; VEMA filters; chip; circuit-level; current density; geometry-level tolerance; power/ground networks; reliability problem; shrinking wire dimensions; variation aware electromigration; wire geometry-level; wire susceptibility; Current density; Finite element methods; Integrated circuit modeling; Metals; Solid modeling; Stress; Wires; Electromigration; lifetime distribution; power/ground network; process variation; variation tolerance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Print_ISBN :
978-1-4577-1399-6
Electronic_ISBN :
1092-3152
Type :
conf
DOI :
10.1109/ICCAD.2011.6105387
Filename :
6105387
Link To Document :
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