DocumentCode :
2680717
Title :
Chemical beam epitaxy of CoGa on GaAs using GaEt3 and CpCo(CO)2 as dual organometallic sources
Author :
Viguier, N. ; Maury, F.
Author_Institution :
Laboratoire de Cristallochimie
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
158
Lastpage :
160
Keywords :
Chemicals; Epitaxial growth; Gallium arsenide; Intermetallic; Lattices; Metallization; Molecular beam epitaxial growth; Temperature distribution; Thermal stability; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887555
Filename :
887555
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680717
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