Growth and optical properties of GaN-based quantum dots

Author

Kim, Hyun Jin ; Na, Hyunseok ; Kwon, Soon-Yong ; Kim, Young-Woon ; Yoon, Euijoon

Author_Institution

Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea

Volume

2

fYear

2003

fDate

15-19 Dec. 2003

Abstract

GaN-based quantum dots were grown by low-pressure metalorganic chemical vapor depositions. High-density In-rich InGaN/GaN quantum dots were successfully grown by low temperature growth. In-rich InGaN/GaN quantum dots showed enhanced emission properties whose wavelength could be controlled to even near-ultraviolet region. Large blue shift of emission peaks from In-rich InGaN quantum dots is supposed to be due to the strong carrier localization effect caused by small size and large band-offset in the structure.

Keywords

III-V semiconductors; MOCVD; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; spectral line shift; GaN-based quantum dots; InGaN-GaN; blue shift; carrier localization effect; enhanced emission properties; low temperature growth; low-pressure metalorganic chemical vapor depositions; near-ultraviolet region; optical properties; Atomic force microscopy; Chemical vapor deposition; Gallium nitride; Optical sensors; Photonic band gap; Quantum dots; Scanning electron microscopy; Temperature sensors; Transmission electron microscopy; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1276999

Filename

1276999