Title :
Stable charge-biased capacitive resonators with encapsulated switches
Author :
Ng, Eldwin Jiaqiang ; Harrison, K.L. ; Everhart, Camille L. ; Hong, Vu A. ; Yushi Yang ; Ahn, Chong H. ; Heinz, D.B. ; Howe, R.T. ; Kenny, Thomas W.
Author_Institution :
Stanford Univ., Stanford, CA, USA
Abstract :
A large dc bias voltage (tens of volts) is often useful for the operation of capacitive MEMS devices. Charge-biasing techniques have been demonstrated to be able to replace a bias voltage source by trapping an equivalent charge on an electrically floating electrode. This work presents a charge-biased resonator that uses an electrostatically actuated mechanical switch with a pull-in voltage of 36 V to introduce a voltage-equivalent charge of 10-15V onto a resonant body. The switch and resonator are hermetically sealed in a clean vacuum cavity, within an epitaxial polysilicon encapsulation process (epi-seal). No charge leakage has been observed, even at an elevated temperature of 125°C for weeks.
Keywords :
electrostatic actuators; encapsulation; hermetic seals; microcavities; micromechanical resonators; microswitches; bias voltage source; capacitive MEMS devices; charge-biased capacitive resonators; charge-biasing techniques; clean vacuum cavity; electrically floating electrode; electrostatically actuated mechanical switch; encapsulated switches; epitaxial polysilicon encapsulation process; equivalent charge trapping; hermetic sealing; large dc bias voltage; temperature 125 C; voltage 10 V to 15 V; voltage 36 V; voltage-equivalent charge; Cavity resonators; Contacts; Electrodes; Logic gates; Micromechanical devices; Thermal stability; Voltage measurement;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
Conference_Location :
San Francisco, CA
DOI :
10.1109/MEMSYS.2014.6765882