DocumentCode :
2680782
Title :
Advances in the formation of C54-FiSi2 with an interposed refractory metal layer some properties
Author :
Mouroux, A. ; Kaplan, W. ; Zhang, Shi-Li ; Petersson, S.
Author_Institution :
KTH-Electrum, Solid State Electronics
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
164
Lastpage :
165
Keywords :
Atomic force microscopy; Conductivity; Electric breakdown; Rapid thermal annealing; Silicides; Solid state circuits; Temperature dependence; Thermal force; Thermal resistance; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1998.887559
Filename :
887559
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2680782
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