• DocumentCode
    2680782
  • Title

    Advances in the formation of C54-FiSi2 with an interposed refractory metal layer some properties

  • Author

    Mouroux, A. ; Kaplan, W. ; Zhang, Shi-Li ; Petersson, S.

  • Author_Institution
    KTH-Electrum, Solid State Electronics
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    164
  • Lastpage
    165
  • Keywords
    Atomic force microscopy; Conductivity; Electric breakdown; Rapid thermal annealing; Silicides; Solid state circuits; Temperature dependence; Thermal force; Thermal resistance; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1998.887559
  • Filename
    887559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2680782