Title :
High crystalline quality titanium silicides on n+p and p+n silicon junctions by sputtering deposition of Ti/Si multilayers and annealing
Author :
Revva, P. ; Kastanas, A. ; Nassiopoulos, A.G.
Author_Institution :
Institute of Microelectronics
Keywords :
Annealing; CMOS technology; Conductivity; Crystallization; Nonhomogeneous media; Silicidation; Silicides; Silicon; Sputtering; Titanium;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1998.887560
