High crystalline quality titanium silicides on n⁺p and p⁺n silicon junctions by sputtering deposition of Ti/Si multilayers and annealing

Author

Revva, P. ; Kastanas, A. ; Nassiopoulos, A.G.

Author_Institution

Institute of Microelectronics

fYear

1997

fDate

16-19 March 1997

Firstpage

166

Lastpage

168

Keywords

Annealing; CMOS technology; Conductivity; Crystallization; Nonhomogeneous media; Silicidation; Silicides; Silicon; Sputtering; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop

Conference_Location

Villard de Lans, France

ISSN

1266-0167

Type

DOI

10.1109/MAM.1998.887560

Filename

887560

Link To Document