DocumentCode
2680953
Title
Formation of thin film of co- and ni-silicide by MEVVA implantation
Author
Zhang, Y. ; Whitlow, H.J. ; Zhang, T.
Author_Institution
Lund Institute of Technology
fYear
1997
fDate
16-19 March 1997
Firstpage
192
Lastpage
195
Keywords
Annealing; Atomic measurements; Electrical resistance measurement; Metallization; Nuclear physics; Semiconductor films; Silicides; Temperature; Thermal stability; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1998.887571
Filename
887571
Link To Document