DocumentCode

2681026

Title

Band structure and transport properties of semiconducting rhenium silicide thin films grown epitaxially on silicon

Author

Muret, P. ; Ali, Imran ; Nguyen, T.T.A.

Author_Institution

Laboratoire d´Etudes des Proprietes Electroniques des Solides, CN.R.S.

fYear

1997

fDate

16-19 March 1997

Firstpage

203

Lastpage

203

Keywords

Hall effect; Optical films; Optical superlattices; Photonic band gap; Semiconductivity; Semiconductor thin films; Silicides; Silicon; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop

Conference_Location

Villard de Lans, France

ISSN

1266-0167

Type

conf

DOI

10.1109/MAM.1998.887576

Filename

887576