DocumentCode
2681142
Title
An Overload Protected Low-Noise X-Band FET Amplifier
Author
Niehenke, E.C. ; Steigerwald, T.E.
fYear
1983
fDate
May 31 1983-June 3 1983
Firstpage
533
Lastpage
535
Abstract
Design and performance of a 40 dB gain X-band low-noise FET amplifier with integral overload protection is presented. Noise figures as low as 2 dB have been achieved using packaged transistors, including a multidiode overload protector that protects the FET´s for input pulse powers to 1 kW. Performance is achieved by the use of new embedment circuits for super-low-noise packaged FET and pin diodes in aluminum-clad soft microstrip.
Keywords
Circuit noise; FETs; Isolators; Low-noise amplifiers; Microstrip; Noise figure; Packaging; Power system protection; Radio frequency; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1983.1130972
Filename
1130972
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