DocumentCode
2681156
Title
Gate sizing and device technology selection algorithms for high-performance industrial designs
Author
Ozdal, Muhammet Mustafa ; Burns, Steven ; Hu, Jiang
Author_Institution
Intel Corp., Hillsboro, OR, USA
fYear
2011
fDate
7-10 Nov. 2011
Firstpage
724
Lastpage
731
Abstract
It is becoming more and more important to design high performance designs with as low power as possible. In this paper, we study the gate sizing and device technology selection problem for today´s industrial designs. We first outline the typical practical problems that make it difficult to use the traditional algorithms on high-performance industrial designs. Then, we propose a Lagrangian Relaxation (LR) based formulation that decouples timing analysis from optimization without resulting in loss of accuracy. We also propose a graph model that accurately captures discrete cell type characteristics based on library data. We model the relaxed Lagrangian subproblem as a discrete graph problem, and propose algorithms to solve it. In our experiments, we demonstrate the importance of using the signoff timing engine to guide the optimization. Compared to a state-of-the art industrial optimization flow, we show that our algorithms can obtain up to 38% leakage power reductions and better overall timing for real high-performance microprocessor blocks.
Keywords
approximation theory; design engineering; graph theory; integrated circuit manufacture; microprocessor chips; optimisation; sizing (materials processing); timing; Lagrangian relaxation based formulation; device technology selection algorithm; discrete graph problem; gate sizing algorithm; graph model; high-performance industrial designs; industrial optimization flow; leakage power reductions; microprocessor blocks; signoff timing engine; timing analysis; Computational modeling; Delay; Libraries; Load modeling; Logic gates; Optimization;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Print_ISBN
978-1-4577-1399-6
Electronic_ISBN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2011.6105409
Filename
6105409
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