DocumentCode
2681171
Title
A Bipolar Oscillator for the 6 GHz Communications Band
Author
Varian, K.R.
fYear
1983
fDate
May 31 1983-June 3 1983
Firstpage
539
Lastpage
540
Abstract
A Si bipolar transistor, cavity stablized, oscillator is described that exhibits phase noise that is greater than 83dB below a reference 100KHz tone 300KHz from the carrier in a 3.1KHz bandwidth, less than 2 watts power consumption at 25°C, a typical frequency stability of +-0.00035% over the -20 to 70°C, and utilizing packaged devices.
Keywords
Automatic frequency control; Bandwidth; Bipolar transistors; Circuit stability; Energy consumption; Local oscillators; Noise figure; Packaging; Phase noise; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1983.1130974
Filename
1130974
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