DocumentCode
2681370
Title
Highly reliable 1.3-μm InGaAlAs WTR-MQW-DFB lasers for 10-Gbit/s SR applications
Author
Nakahara, K. ; Yuasa, T.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
Directly modulated WTR-DFB lasers operating at 10 Gb/s are reviewed, and superior laser properties including reliability of 1.3-μm InGaAlAs WTR-MQW-DFB lasers are demonstrated.
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; optical communication equipment; optical modulation; quantum well lasers; semiconductor device reliability; 1.3 mum; 10 Gbit/s; InGaAlAs; InGaAlAs lasers; WTR-MQW-DFB lasers; direct modulation; laser properties; reliability; Strontium;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1277043
Filename
1277043
Link To Document