DocumentCode :
2681370
Title :
Highly reliable 1.3-μm InGaAlAs WTR-MQW-DFB lasers for 10-Gbit/s SR applications
Author :
Nakahara, K. ; Yuasa, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume :
2
fYear :
2003
fDate :
15-19 Dec. 2003
Abstract :
Directly modulated WTR-DFB lasers operating at 10 Gb/s are reviewed, and superior laser properties including reliability of 1.3-μm InGaAlAs WTR-MQW-DFB lasers are demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; optical communication equipment; optical modulation; quantum well lasers; semiconductor device reliability; 1.3 mum; 10 Gbit/s; InGaAlAs; InGaAlAs lasers; WTR-MQW-DFB lasers; direct modulation; laser properties; reliability; Strontium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
Type :
conf
DOI :
10.1109/CLEOPR.2003.1277043
Filename :
1277043
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2681370
بازگشت