Title :
Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content
Author :
Kawaguchi, M. ; Miyamoto, T. ; Kawakami, S. ; Minobe, S. ; Saitoh, A. ; Koyama, F.
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We found that lasing wavelength, threshold and efficiency of GaInNAs/GaAsP strain-compensated lasers depends on the P content in GaAsP barrier layer. For a P content of 11%, we obtained improved threshold and efficiency compared with GaAs barrier.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; phosphorus; quantum well lasers; semiconductor quantum wells; GaInNAs-GaAsP; barrier layer; lasing characteristics; phosphorous content; strain-compensated lasers; Capacitive sensors; Chemical lasers; Chemical vapor deposition; Gallium arsenide; MOCVD; Optical materials; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1277044
