Title :
Narrow ridge-waveguide multi-layer InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range
Author :
Lin, G. ; Chen, I.F. ; Chi, J.Y.
Author_Institution :
Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
We have demonstrated high-performance multi-layer (2, 5 and 10) InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm with narrow ridge-waveguide structure. Simultaneous ground-state and excited-state losing emissions well above threshold was observed and their spectral evolution was also investigated.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum dot lasers; ridge waveguides; semiconductor quantum dots; waveguide lasers; 1.3 mum; InAs-InGaAs-GaAs; InAs/InGaAs/GaAs quantum dot lasers; excited-state losing emission; ground-state losing emission; narrow ridge-waveguide multilayer; spectral evolution; Gallium arsenide; Indium gallium arsenide; Laser excitation; Laser theory; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Stationary state; Threshold current; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1277047
