Characterization of 850 nm AlGaAs/GaAs implant vertical cavity emitting lasers utilizing silicon implantation induced disordering

Author

Kuo, H.C. ; Shu, W.C. ; Chang, T. C Ly Ya-hsien ; Lai, Fang-i ; Lai, Li-Hung ; Wang, Stanley C.

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

2

fYear

2003

fDate

15-19 Dec. 2003

Abstract

In this paper, we report a novel implant VCSELs utilizing silicon implantation induced disordering. This VCSELs exhibit kink-free current-light output performance with threshold currents ∼2.2 mA, and the slope efficiencies ∼0.45 W/A. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps.

Keywords

III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; gallium compounds; ion implantation; jitter; laser cavity resonators; semiconductor doping; semiconductor lasers; silicon; surface emitting lasers; 2.125 Gbit/s; 7 mA; 850 nm; AlGaAs-GaAs; AlGaAs/GaAs implant; Si; disordering; eye diagram; jitter; kink-free current-light output; silicon implantation; vertical cavity emitting lasers; Gallium arsenide; Implants; Jitter; Lasers and electrooptics; Signal analysis; Silicon; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1277059

Filename

1277059