Title :
Characteristics of InGaNAs vertical-cavity surface-emitting lasers
Author :
Yang, Hung-Pin D. ; Lu, Chen-Ming ; Huang, Chun-Yuan ; Wang, Jing-May ; Sung, Chia-Pin ; Lee, Tsin-Dong ; Chi, Jim Y.
Author_Institution :
Nanophotonics Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
We report our results on InGaNAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications at 1.3 μm range. The epitaxial layers were grown on the n-GaAs substrate in a MOCVD system. The nitrogen composition of the InGaNAs/GaAs active region is 0 to 0.01. These InGaNAs VCSELs show continuous-wave (CW) lasing operation at room temperature.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; laser cavity resonators; optical fibre communication; semiconductor epitaxial layers; semiconductor lasers; surface emitting lasers; 1.3 mum; 20 degC; GaAs; InGaNAs; InGaNAs VCSEL; InGaNAs/GaAs active region; MOCVD system; continuous-wave lasing operation; epitaxial layers; fiber-optic applications; n-GaAs substrate; nitrogen composition; room temperature; vertical-cavity surface-emitting lasers; Gas lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1277061
