DocumentCode :
2681682
Title :
Photovoltaic cell characteristics for high intensity laser light
Author :
Miyakawa, Hiroshi ; Tanaka, Yosuke ; Kurokawa, Takashi
Author_Institution :
Graduate Sch. of Electron. & Inf. Technol., Tokyo Univ. of Agric. & Technol., Japan
Volume :
2
fYear :
2003
fDate :
15-19 Dec. 2003
Abstract :
Photovoltaic cell characteristics for high intensity laser light including Si, GaAs, InGaAs photovoltaic cells and an uni-traveling-carrier photodiode are investigated. We estimate the values of the series resistance of photovoltaic cells and clarify that the extremely small series resistance is important to obtain higher conversion efficiency especially for high intensity laser light.
Keywords :
III-V semiconductors; electric resistance; elemental semiconductors; gallium arsenide; indium compounds; photodiodes; photovoltaic cells; silicon; solid lasers; GaAs; InGaAs; PV cells; Si; conversion efficiency; high intensity laser light; photovoltaic cell characteristics; series resistance; unitraveling-carrier photodiode; Diode lasers; Electric resistance; Fiber lasers; Gallium arsenide; Information technology; Optical fibers; Optical films; Photovoltaic cells; Ultraviolet sources; Wavelength conversion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
Type :
conf
DOI :
10.1109/CLEOPR.2003.1277063
Filename :
1277063
Link To Document :
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