• DocumentCode
    268170
  • Title

    Na Doping of CIGS Solar Cells Using Low Sodium-Doped Mo Layer

  • Author

    Salomé, P. ; Fjällström, Viktor ; Hultqvist, A. ; Edoff, M.

  • Author_Institution
    Dept. of Eng. Sci., Uppsala Univ., Uppsala, Sweden
  • Volume
    3
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    509
  • Lastpage
    513
  • Abstract
    Na plays an important role in the electrical performance of Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. Traditionally, Na has been introduced during the growth of CIGS by thermal diffusion from the soda-lime glass (SLG) substrate; however, better control of the amount of Na is needed to have a more precise control of growth conditions. The introduction of Na into CIGS was studied in three different ways: from the SLG, from a NaF precursor, and from a Na-doped Mo (MoNa) back contact. The most successful approaches were obtained by using the conventional SLG and the NaF precursor. Different growth temperatures of CIGS were tested in an attempt to diffuse more Na from the MoNa layer.
  • Keywords
    copper compounds; gallium compounds; indium compounds; molybdenum; semiconductor doping; sodium; solar cells; ternary semiconductors; CIGS solar cell; CuInGaSe2; Mo:Na; doping; electrical performance; growth temperature; soda lime glass substrate; thermal diffusion; thin film solar cell; Aluminum oxide; Atomic layer deposition; Photovoltaic cells; Photovoltaic systems; Solids; Substrates; Photovoltaic cells; solar energy; thin films;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2012.2226144
  • Filename
    6361422