DocumentCode
268170
Title
Na Doping of CIGS Solar Cells Using Low Sodium-Doped Mo Layer
Author
SalomeÌ, P. ; Fjällström, Viktor ; Hultqvist, A. ; Edoff, M.
Author_Institution
Dept. of Eng. Sci., Uppsala Univ., Uppsala, Sweden
Volume
3
Issue
1
fYear
2013
fDate
Jan. 2013
Firstpage
509
Lastpage
513
Abstract
Na plays an important role in the electrical performance of Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. Traditionally, Na has been introduced during the growth of CIGS by thermal diffusion from the soda-lime glass (SLG) substrate; however, better control of the amount of Na is needed to have a more precise control of growth conditions. The introduction of Na into CIGS was studied in three different ways: from the SLG, from a NaF precursor, and from a Na-doped Mo (MoNa) back contact. The most successful approaches were obtained by using the conventional SLG and the NaF precursor. Different growth temperatures of CIGS were tested in an attempt to diffuse more Na from the MoNa layer.
Keywords
copper compounds; gallium compounds; indium compounds; molybdenum; semiconductor doping; sodium; solar cells; ternary semiconductors; CIGS solar cell; CuInGaSe2; Mo:Na; doping; electrical performance; growth temperature; soda lime glass substrate; thermal diffusion; thin film solar cell; Aluminum oxide; Atomic layer deposition; Photovoltaic cells; Photovoltaic systems; Solids; Substrates; Photovoltaic cells; solar energy; thin films;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2012.2226144
Filename
6361422
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